High-k gate dielectrics for CMOS technology /

• Άλλοι συγγραφείς: He, Gang (Professor of physics), Sun, Zhaoqi (Professor of physics)
• Μορφή: Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Weinheim : Wiley-VCH, 2012.
• Θέματα: Dielectrics.; Metal oxide semiconductors, Complementary.; SCIENCE > Physics > Electricity.; SCIENCE > Physics > Electromagnetism.; Electronic books.

 "A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting devices, and an outlook towards future transistor stacking technology. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering."--   Provided by publisher. 

 High-k Gate Dielectrics for CMOS Technology; Contents; Preface; List of Contributors; Color Plates; Part One Scaling and Challenge of Si-based CMOS; 1 Scaling and Limitation of Si-based CMOS; 1.1 Introduction; 1.2 Scaling and Limitation of CMOS; 1.2.1 Device Scaling and Power Dissipation; 1.2.2 Gate Oxide Tunneling; 1.2.3 Gate Oxide Scaling Trends; 1.2.4 Scaling and Limitation of SiO2 Gate Dielectrics; 1.2.5 Silicon Oxynitrides; 1.3 Toward Alternative Gate Stacks Technology; 1.3.1 Advances and Challenges in Dielectric Development; 1.3.2 Advances and Challenges in Electrode Development.