High-k gate dielectrics for CMOS technology /

• Άλλοι συγγραφείς: He, Gang (Professor of physics), Sun, Zhaoqi (Professor of physics)
• Μορφή: Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Weinheim : Wiley-VCH, 2012.
• Θέματα: Dielectrics.; Metal oxide semiconductors, Complementary.; SCIENCE > Physics > Electricity.; SCIENCE > Physics > Electromagnetism.; Electronic books.

"A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over...

Πίνακας περιεχομένων:

• High-k Gate Dielectrics for CMOS Technology; Contents; Preface; List of Contributors; Color Plates; Part One Scaling and Challenge of Si-based CMOS; 1 Scaling and Limitation of Si-based CMOS; 1.1 Introduction; 1.2 Scaling and Limitation of CMOS; 1.2.1 Device Scaling and Power Dissipation; 1.2.2 Gate Oxide Tunneling; 1.2.3 Gate Oxide Scaling Trends; 1.2.4 Scaling and Limitation of SiO2 Gate Dielectrics; 1.2.5 Silicon Oxynitrides; 1.3 Toward Alternative Gate Stacks Technology; 1.3.1 Advances and Challenges in Dielectric Development; 1.3.2 Advances and Challenges in Electrode Development.
• 1.4 Improvements and Alternative to CMOS Technologies1.4.1 Improvement to CMOS; 1.4.1.1 New Materials; 1.4.1.2 New Structures; 1.5 Potential Technologies Beyond CMOS; 1.6 Conclusions; References; Part Two High-k Deposition and Materials Characterization; 2 Issues in High-k Gate Dielectrics and its Stack Interfaces; 2.1 Introduction; 2.2 High-k Dielectrics; 2.2.1 The Criteria Required for High-k Dielectrics; 2.2.2 The Challenges of High-k Dielectrics; 2.2.2.1 Structural Defects; 2.2.2.2 Channel Mobility Degradation; 2.2.2.3 Threshold Voltage Control; 2.2.2.4 Reliability; 2.3 Metal Gates.
• 2.3.1 Basic Requirements for Metal Gates2.3.2 Metal Gate Materials; 2.3.2.1 Pure Metals; 2.3.2.2 Metallic Alloys; 2.3.2.3 Metal Nitrides; 2.3.2.4 Metal Silicides; 2.3.3 Work Function; 2.3.4 Metal Gate Structures; 2.3.5 Metal Gate/High-k Integration; 2.3.6 Process Integration; 2.4 Integration of High-k Gate Dielectrics with Alternative Channel Materials; 2.4.1 High-k/Ge Interface; 2.4.2 High-k/III-V Interface; 2.5 Summary; References; 3 UV Engineering of High-k Thin Films; 3.1 Introduction; 3.2 Gas Discharge Generation of UV (Excimer) Radiation.
• 3.3 Excimer Lamp Sources Based on Silent Discharges3.4 Predeposition Surface Cleaning for High-k Layers; 3.5 UV Photon Deposition of Ta2O5 Films; 3.6 Photoinduced Deposition of Hf1-xSixOy Layers; 3.7 Summary; References; 4 Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate; 4.1 Introduction; 4.2 Precursor Effect on the HfO2 Characteristics; 4.2.1 Hafnium Precursor Effect on the HfO2 Dielectric Characteristics; 4.2.1.1 Hafnium Chloride (HfCl4); 4.2.1.2 Tetrakis Dimethylamido Hafnium [HfN(CH3)2]4; 4.2.1.3 Tetrakis Ethylmethylamino Hafnium (Hf[N(C2H5)(CH3)]4).
• 4.2.1.4 tert-Butoxytris[Ethylmethylamido] Hafnium (HfOtBu[NEtMe]3)4.2.1.5 tert-Butoxide Hafnium (Hf[OC4H9]4); 4.2.2 Oxygen Sources and Reactants; 4.2.2.1 H2O versus O3; 4.2.2.2 O3 Concentration; 4.2.2.3 Reactants for In Situ N Incorporation; 4.3 Doped and Mixed High-k; 4.3.1 Zr-Doped HfO2; 4.3.2 Si-Doped HfO2; 4.3.3 Al-Doped HfO2; 4.4 Summary; References; 5 Structural and Electrical Characteristics of Alternative High-k Dielectrics for CMOS Applications; 5.1 Introduction; 5.2 Requirement of High-k Oxide Materials; 5.3 Rare-Earth Oxide as Alternative Gate Dielectrics; 5.4 Structural Characteristics of High-k RE Oxide Films.