SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors /

BiAdvanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors/i/b/ No comprehensive description of the physics and possible applications of the Lubistor can be found in a single source even though the Lubistor is already being used in SOI LSIs....

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριος συγγραφέας: Omura, Y. (Yasuhisa)
Μορφή: Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Singapore : IEEE/Wiley, 2013.
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
Πίνακας περιεχομένων:
  • Title Page; Copyright; Preface; Acknowledgements; Introduction to an Exotic Device World; Part One: Brief Reviewand Modern Applications of Pn-Junction Devices; Chapter 1: Concept of an Ideal pn Junction; References; Chapter 2: Understanding the Non-ideal pn Junction
  • Theoretical Reconsideration; 2.1 Introduction; 2.2 Bulk pn-Junction Diode; 2.3 Bulk pn-Junction Diode
  • Reverse Bias; 2.4 The Insulated-Gate pn Junction of the SOI Lubistor
  • Forward Bias; 2.5 The Insulated-Gate pn Junction of the SOI Lubistor
  • Reverse Bias; References; Chapter 3: Modern Applications of the pn Junction
  • Chapter 6: Modeling of Lubistor Operation Without an EFS Layer for Circuit Simulations6.1 Introduction; 6.2 Device Structure and Measurement System; 6.3 Equivalent Circuit Models of an SOI Lubistor; 6.4 Summary; References; Chapter 7: Noise Characteristics and Modeling of Lubistor; 7.1 Introduction; 7.2 Experiments; 7.3 Results and Discussion; 7.4 Summary; References; Chapter 8: Supplementary Study on Buried Oxide Characterization; 8.1 Introduction; 8.2 Physical Model for the Transition Layer; 8.3 Capacitance Simulation; 8.4 Device Fabrication; 8.5 Results and Discussion; 8.6 Summary
  • Appendix 10B: Calculation of Electron and Hole Densities in 2DSSReferences; Chapter 11: Two-Dimensional Quantization Effect on Indirect Tunneling in SOI Lubistors with a Thin Silicon Layer; 11.1 Introduction; 11.2 Experimental Results; 11.3 Theoretical Discussion; 11.4 Summary; Appendix 11A: Wave Function Coupling Effect in the Lateral Two-Dimensional-System-to-Three-Dimensional-System (2D-to-3D) Tunneling Process; References; Chapter 12: Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors; 12.1 Introduction