Advances in multifunctional materials and systems II : a collection of papers presented at the 10th Pacific Rim Conference on Ceramic and Glass Technology, June 2-6, 2012, Coronado, California /
| Συλλογικό Έργο: | , |
|---|---|
| Άλλοι συγγραφείς: | , , , |
| Μορφή: | Πρακτικό Συνεδρίου Ηλ. βιβλίο |
| Γλώσσα: | English |
| Έκδοση: |
[Westerville, Ohio] : Hoboken :
American Ceramic Society ; Wiley,
[2014]
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| Σειρά: | Ceramic transactions ;
v. 245. |
| Θέματα: | |
| Διαθέσιμο Online: | Full Text via HEAL-Link |
Πίνακας περιεχομένων:
- Advances in electroceramics Pyroelectric performances of relaxor-based ferroelectric single crystals and their applications in infrared detectors / Long Li, Haosu Luo, Xiangyong Zhao, Xiaobing Li, Bo Ren, Qing Xu, and Wenning Di ; Formation of tough foundation layer for electrical plating on insulator using aerosol deposition method of Cu-Al₂O₃ mixed powder / Naoki Seto, Shingo Hirose, Hiroki Tsuda and Jun Akedo ; Formation and electromagnetic properties of 0.1BTO/0.9NZFO ceramic composite with high density prepared by three-step sintering method / Bin Xiao, Juncong Wang, Ning Ma, and Piyi Du
- Microwave materials and their applications Thin glass characterization in the radio frequency range / Alfred Ebberg [and 11 others] ; Formation of silver nano particles in percolative Ag-PbTiO₃ composite dielectric thin film / Tao Hu, Zongrong Wang, Liwen Tang, Ning Ma, and Piyi Du ; Software for calculating permittivity of resonators: HakCol & ErCalc / Rick Ubic ; Effects of MgO additive on structural, dielectric properties and breakdown strength of Mg₂TiO₄ ceramics doped with ZnO-B₂O₃ glass / Xiaohong Wang, Mengjie Wang, Zhaoqiang Li, and Wenzhong Lu ; Design of microwave dielectrics based on crystallography / Hitoshi Ohsato
- Oxide materials for nonvolatile memory technology and applications Stable resistive switching characteristics of Al₂O₃ layers inserted in HfO₂ based RRAM devices / Chun-Yang Huang, Jheng-Hong Jieng, and Tseung-Yuen Tseng ; Improvement of resistive switching properties of Ti/ZrO₂/Pt with embedded germanium / Chun-An Lin, Debashis Panda, and Tseung-Yuen Tseng ; Nonvolatile memories using single electron tunneling effects in Si quantum dots inside tunnel silicon oxide / Ryuji Ohba ; Resistive switching and rectification characteristics with CoO/ZrO₂ double layers / Tsung-Ling Tsai, Jia-Woel Wu, and Tseng-Yuen Tseng ; Research of nano-scaled transition metal oxide resistive non-volatile memory (R-RAM) / ChiaHua Ho [and 14 others].
