Fundamentals of silicon carbide technology : growth, characterization, devices and applications /

• Κύριος συγγραφέας: Kimoto, Tsunenobu, 1963-
• Άλλοι συγγραφείς: Cooper, James A., 1946-
• Μορφή: Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Singapore : Wiley, [2014]
• Θέματα: Silicon carbide.; Semiconductors.; Integrated circuits.; TECHNOLOGY & ENGINEERING > Mechanical.; Electronic books.

 "Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field."--   Portion of summary from book. 

 ""Title Page -- Copyright -- About the Authors -- Preface -- Chapter 1: Introduction -- 1.1 Progress in Electronics -- 1.2 Features and Brief History of Silicon Carbide -- 1.3 Outline of This Book -- References -- Chapter 2: Physical Properties of Silicon Carbide -- 2.1 Crystal Structure -- 2.2 Electrical and Optical Properties -- 2.3 Thermal and Mechanical Properties -- 2.4 Summary -- References -- Chapter 3: Bulk Growth of Silicon Carbide -- 3.1 Sublimation Growth -- 3.2 Polytype Control in Sublimation Growth""