Fundamentals of silicon carbide technology : growth, characterization, devices and applications /

• Κύριος συγγραφέας: Kimoto, Tsunenobu, 1963-
• Άλλοι συγγραφείς: Cooper, James A., 1946-
• Μορφή: Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Singapore : Wiley, [2014]
• Θέματα: Silicon carbide.; Semiconductors.; Integrated circuits.; TECHNOLOGY & ENGINEERING > Mechanical.; Electronic books.

"Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variet...

Πίνακας περιεχομένων:

• ""Title Page
• Copyright
• About the Authors
• Preface
• Chapter 1: Introduction
• 1.1 Progress in Electronics
• 1.2 Features and Brief History of Silicon Carbide
• 1.3 Outline of This Book
• References
• Chapter 2: Physical Properties of Silicon Carbide
• 2.1 Crystal Structure
• 2.2 Electrical and Optical Properties
• 2.3 Thermal and Mechanical Properties
• 2.4 Summary
• References
• Chapter 3: Bulk Growth of Silicon Carbide
• 3.1 Sublimation Growth
• 3.2 Polytype Control in Sublimation Growth""
• ""3.3 Defect Evolution and Reduction in Sublimation Growth
• 3.4 Doping Control in Sublimation Growth
• 3.5 High- Temperature Chemical Vapor Deposition
• 3.6 Solution Growth
• 3.7 3C-SiC Wafers Grown by Chemical Vapor Deposition
• 3.8 Wafering and Polishing
• 3.9 Summary
• References
• Chapter 4: Epitaxial Growth of Silicon Carbide
• 4.1 Fundamentals of SiC Homoepitaxy
• 4.2 Doping Control in SiC CVD
• 4.3 Defects in SiC Epitaxial Layers
• 4.4 Fast Homoepitaxy of SiC
• 4.5 SiC Homoepitaxy on Non-standard Planes""
• ""4.6 SiC Homoepitaxy by Other Techniques
• 4.7 Heteroepitaxy of 3C-SiC
• 4.8 Summary
• References
• Chapter 5: Characterization Techniques and Defects in Silicon Carbide
• 5.1 Characterization Techniques
• 5.2 Extended Defects in SiC
• 5.3 Point Defects in SiC
• 5.4 Summary
• References
• Chapter 6: Device Processing of Silicon Carbide
• 6.1 Ion Implantation
• 6.2 Etching
• 6.3 Oxidation and Oxide/SiC Interface Characteristics
• 6.4 Metallization
• 6.5 Summary
• References
• Chapter 7: Unipolar and Bipolar Power Diodes""
• ""7.1 Introduction to SiC Power Switching Devices
• 7.2 Schottky Barrier Diodes (SBDs)
• 7.3 pn and pin Junction Diodes
• 7.4 Junction-Barrier Schottky (JBS) and Merged pin-Schottky (MPS) Diodes
• References
• Chapter 8: Unipolar Power Switching Devices
• 8.1 Junction Field-Effect Transistors (JFETs)
• 8.2 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
• References
• Chapter 9: Bipolar Power Switching Devices
• 9.1 Bipolar Junction Transistors (BJTs)
• 9.2 Insulated-Gate Bipolar Transistors (IGBTs)
• 9.3 Thyristors
• References""
• ""Chapter 10: Optimization and Comparison of Power Devices
• 10.1 Blocking Voltage and Edge Terminations for SiC Power Devices
• 10.2 Optimum Design of Unipolar Drift Regions
• 10.3 Comparison of Device Performance
• References
• Chapter 11: Applications of Silicon Carbide Devices in Power Systems
• 11.1 Introduction to Power Electronic Systems
• 11.2 Basic Power Converter Circuits
• 11.3 Power Electronics for Motor Drives
• 11.4 Power Electronics for Renewable Energy
• 11.5 Power Electronics for Switch-Mode Power Supplies""