Wide band gap semiconductor nanowires. 2, Heterostructures and optoelectronic devices /
This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV d...
| Άλλοι συγγραφείς: | , |
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| Μορφή: | Ηλ. βιβλίο |
| Γλώσσα: | English |
| Έκδοση: |
London, UK :
ISTE,
2014.
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| Σειρά: | Electronics engineering series (London, England)
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| Θέματα: | |
| Διαθέσιμο Online: | Full Text via HEAL-Link |
| Περίληψη: | This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and. |
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| Φυσική περιγραφή: | 1 online resource : illustrations (black and white). |
| Βιβλιογραφία: | Includes bibliographical references. |
| ISBN: | 9781118984277 1118984277 9781118984291 1118984293 1848216874 9781848216877 |
| DOI: | 10.1002/9781118984291 |
