Wide band gap semiconductor nanowires. 2, Heterostructures and optoelectronic devices /

• Άλλοι συγγραφείς: Consonni, Vincent (Επιμελητής έκδοσης), Feuillet, Guy (Επιμελητής έκδοσης)
• Μορφή: Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: London, UK : ISTE, 2014.
• Σειρά: Electronics engineering series (London, England)
• Θέματα: Optoelectronic devices.; Nanowires.; TECHNOLOGY & ENGINEERING > Mechanical.; Electronic books.

 This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and. 

 Cover; Title Page; Copyright; Contents; Preface; Part 1: GaN and ZnO Nanowire Heterostructures; Chapter 1: AlGaN/GaN Nanowire Heterostructures ; 1.1. A model system for AlGaN/GaN heterostructures; 1.2. Axial AlGaN/GaN nanowire heterostructures; 1.2.1. Structural properties of axial AlGaN/GaN nanowire heterostructures; 1.2.2. Optical properties of axial AlGaN/GaN nanowire heterostructures; 1.2.3. Lateral internal electric fields; 1.2.4. Axial internal electric fields; 1.2.5. Optical characterization of single-AlGaN/GaN nanowires containing GaN nanodisks; 1.2.6. Electrical transport properties.