Wide band gap semiconductor nanowires. 1, Low-dimensionality effects and growth /

• Άλλοι συγγραφείς: Consonni, Vincent (Επιμελητής έκδοσης), Feuillet, Guy (Επιμελητής έκδοσης)
• Μορφή: Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: London, UK : ISTE, 2014.
• Σειρά: Electronics engineering series (London, England)
• Θέματα: Optoelectronic devices.; Nanowires.; TECHNOLOGY & ENGINEERING > Mechanical.; Electronic books.

 GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanismsof ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices. 

 Cover; Title Page ; Copyright; Contents; Preface; PART 1: GaN and ZnO Nanowires: Low-dimensionality Effects; Chapter 1: Quantum and Optical Confinement; 1.1. Introduction; 1.2. All-optical integrated circuits with Bose exciton polaritons; 1.3. High efficiency single photon sources; 1.4. High efficiency solar photovoltaics; 1.4.1. Potential photovoltaic benefits of the nanowire geometry; 1.4.2. Interests of wide band gap semiconductor photovoltaics; 1.5. Conclusion; 1.6. Bibliography; Chapter 2: Stress Relaxation in Nanowires with Heterostructures; 2.1. Introduction; 2.1.1. Scope.