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05928nam a2200733 4500 |
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ocn897466493 |
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OCoLC |
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20170124071804.6 |
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m o d |
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cr cnu|||unuuu |
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141204s2014 enka ob 001 0 eng d |
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|a N$T
|b eng
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|d DG1
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|a 898101691
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|a 9781118790281
|q electronic bk.
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|a 1118790286
|q electronic bk.
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|a 9781118789988
|q electronic bk.
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|a 1118789989
|q electronic bk.
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|z 9781848216235
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|a 1848216238
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|a 9781848216235
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|a 9781322436579
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|a 1322436576
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|a DEBBG
|b BV043397348
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|a (OCoLC)897466493
|z (OCoLC)898101691
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|a TK7895.M3
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|a TEC
|x 009070
|2 bisacsh
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|a 621.397
|2 23
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|a MAIN
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1 |
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|a Lacaze, Pierre-Camille,
|e author.
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1 |
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|a Non-volatile memories /
|c Pierre-Camille Lacaze, Jean-Christophe Lacroix.
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|a London :
|b ISTE Ltd ; New York : John Wiley and Sons, Inc.,
|c 2014.
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| 300 |
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|a 1 online resource :
|b illustrations.
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| 336 |
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|a text
|b txt
|2 rdacontent
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| 337 |
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|a computer
|b c
|2 rdamedia
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| 338 |
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|a online resource
|b cr
|2 rdacarrier
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| 490 |
1 |
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|a Electronics engineering series
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|a Includes bibliographical references and index.
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|a Description based on online resource; title from PDF title page (EBSCO, viewed December 8, 2014).
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|a Cover; Title Page; Copyright; Contents; Acknowledgments; Preface; PART 1: Information Storage and the State of the Art of Electronic Memories; 1: General Issues Related to Data Storage and Analysis Classification of Memories and Related Perspectives; 1.1. Issues arising from the flow of digital information; 1.2. Current electronic memories and their classification; 1.3. Memories of the future; 2: State of the Art of DRAM, SRAM, Flash, HDD and MRAM Electronic Memories; 2.1. DRAM volatile memories; 2.1.1. The operating principle of a MOSFET (metal oxide semiconductor field effect transistor)
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|a 2.1.2. Operating characteristics of DRAM memories2.2. SRAM memories; 2.3. Non-volatile memories related to CMOS technology; 2.3.1. Operational characteristics of a floating gate MOSFET; 2.3.1.1. How to charge and discharge the floating gate?; 2.3.1.2. Physical problems related to the storage of electrical charges and their impact on the operation of a floating gate memory; 2.3.1.2.1. Charge retention; 2.3.1.2.2. Problems related to writing and electron injection; 2.3.1.3. Multilevel cells
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|a 2.3.1.4. The quality of dielectrics: one of the reasons behind the limitation of floating gate memory performances2.3.1.5. The "Achille's heel" of floating gate memories; 2.3.2. Flash memories; 2.3.2.1. NOR and NAND Flash memories; 2.3.2.2. General organization of NAND Flash memories; 2.3.2.3. Perspectives for Flash memories; 2.4. Non-volatile magnetic memories (hard disk drives -- HDDs and MRAMs); 2.4.1. The discovery of giant magneto resistance at the origin of the spread of hard disk drives; 2.4.1.1. GMR characteristics; 2.4.2. Spin valves; 2.4.3. Magnetic tunnel junctions
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|a 2.4.4. Operational characteristics of a hard disk drive (HDD)2.4.5. Characteristics of a magnetic random access memory (MRAM); 2.5. Conclusion; 3: Evolution of SSD Toward FeRAM, FeFET, CTM and STT-RAM Memories; 3.1. Evolution of DRAMs toward ferroelectric FeRAMs; 3.1.1. Characteristics of a ferroelectric material; 3.1.2. Principle of an FeRAM memory; 3.1.3. Characteristics of an FeFET memory; 3.1.3.1. Retention characteristics; 3.1.3.2. Ferroelectric materials other than oxides?; 3.2. The evolution of Flash memories towards charge trap memories (CTM)
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|a 3.3. The evolution of magnetic memories (MRAM) toward spin torque transfer memories (STT-RAM)3.3.1. Nanomagnetism and experimental implications; 3.3.2. Characteristics of spin torque transfer; 3.3.3. Recent evolution with use of perpendicular magneticanisotropic materials; 3.4. Conclusions; PART 2: The Emergence of New Concepts: The Inorganic NEMS, PCRAM, ReRAM and Organic Memories; 4: Volatile and Non-volatile Memories Based on NEMS; 4.1. Nanoelectromechanical switches with two electrodes; 4.1.1. NEMS with cantilevers; 4.1.1.1. Operation and memory effect of an NEMS with a cantilever
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|a Written for scientists, researchers, and engineers, <i>Non-volatile Memories</i> describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.
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| 650 |
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|a Magnetic memory (Computers)
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| 650 |
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|a Computer storage devices.
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| 650 |
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|a Integrated circuits.
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| 650 |
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7 |
|a TECHNOLOGY & ENGINEERING / Mechanical
|2 bisacsh
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| 650 |
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7 |
|a Computer storage devices.
|2 fast
|0 (OCoLC)fst00872634
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| 650 |
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7 |
|a Integrated circuits.
|2 fast
|0 (OCoLC)fst00975535
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| 650 |
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7 |
|a Magnetic memory (Computers)
|2 fast
|0 (OCoLC)fst01005745
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| 650 |
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4 |
|a Semiconductor storage devices.
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| 655 |
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4 |
|a Electronic books.
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| 655 |
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0 |
|a Electronic books.
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| 700 |
1 |
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|a Lacroix, Jean-Christophe,
|e author.
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| 776 |
0 |
8 |
|i Print version:
|a Lacaze, Pierre-Camille
|t Non-volatile Memories
|d Hoboken : Wiley,c2014
|z 9781848216235
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| 830 |
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|a Electronics engineering series (London, England)
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| 856 |
4 |
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|u https://doi.org/10.1002/9781118789988
|z Full Text via HEAL-Link
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| 994 |
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|a 92
|b DG1
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