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05719nam a2200529 4500 |
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ocn912277645 |
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20180501122026.0 |
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|a 913333856
|a 914434213
|a 951675499
|a 964303137
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|a 9780128010686
|q (electronic bk.)
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|a 0128010681
|q (electronic bk.)
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|a 9780128010211
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|a (OCoLC)912277645
|z (OCoLC)913333856
|z (OCoLC)914434213
|z (OCoLC)951675499
|z (OCoLC)964303137
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|b .A375 v.4eb
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|a 621.38152
|2 23
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|a TEFA
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|a Advances in photovoltaics.
|n part 4 /
|c edited by Gerhard P. Willeke, Eicke R. Weber.
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| 250 |
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|a First edition.
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1 |
|a Amsterdam, Netherlands ;
|a Boston, Mass. :
|b Elsevier/ Academic Press,
|c 2015.
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| 300 |
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|a 1 online resource (x, 181 pages) :
|b illustrations.
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| 336 |
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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1 |
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|a Semiconductors and semimetals,
|x 0080-8784 ;
|v volume 92
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| 504 |
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|a Includes bibliographical references and index.
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0 |
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|a Print version record.
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|a Advances in Photovoltaics: Part Four provides valuable information on the challenges faced during the transformation of our energy supply system to more efficient, renewable energies. The volume discusses the topic from a global perspective, presenting the latest information on photovoltaics, a cornerstone technology. It covers all aspects of this important semiconductor technology, reflecting on the tremendous and dynamic advances that have been made on this topic since 1975, when the first book on solar cells-written by Harold J. Hovel of IBM-was published as volume 11 in the now famous series on Semiconductors and Semimetals. Readers will gain a behind the scenes look at the continuous and rapid scientific development that leads to the necessary price and cost reductions in global industrial mass-production.
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|a Front Cover; Advances in Photovoltaics: Part 4; Copyright; Contents; Contributors; Preface; Chapter One: Silicon Crystallization Technologies; 1. Silicon Feedstock; 1.1. Polysilicon: The Base Material for over 90% of All Solar Cells; 1.2. The Chemical Path; 1.3. Fluidized Bed Reactor; 1.4. The Metallurgical Path: UMG-Si; 1.5. Different Poly for Different Crystallization Techniques; 1.5.1. Mono Growth, Single Batch Mode; 1.5.2. Feeding and Multipulling; 1.5.3. Standard Multicrystalline Casting; 1.5.4. Float Zone; 2. Fundamental Parameters for Silicon Crystallization.
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|a 2.1. Material Properties, Material Utilization, and Chemical Reactivity2.2. Numerical Simulation; 3. Crystallization Technologies; 3.1. Pulling from the Melt: The Cz Technique; 3.1.1. Standard Cz Growth; 3.1.1.1. Process Sequence; 3.1.1.2. The Main Cost Drivers; 3.1.2. Actual Trends and Recent Developments; 3.1.2.1. Magnetic Cz; 3.1.2.2. Active Cooling; 3.1.2.3. Multipulling, Feeding, and Continuous Growth; 3.2. Directional Solidification: Growth of Multicrystalline Silicon; 3.2.1. Standard Growth Process; 3.2.1.1. The Hardware; 3.2.1.2. Growth Process; 3.2.1.3. Crucible Coating.
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|a 3.2.2. Actual Trends3.2.2.1. Scaling; 3.2.2.2. Mono-Like Growth; 3.2.2.3. High-Performance Multi; 3.3. FZ Growth; 3.3.1. State of the Art; 3.3.1.1. Diameter Limitations; 3.3.1.2. Feedstock; 4. Summary and Final Remarks; References; Chapter Two: Wafering of Silicon; 1. Introduction; 2. Multiwire Sawing Technology; 2.1. Slurry-Based Sawing; 2.2. Fixed Abrasive Sawing; 2.3. Experimental Sawing Results; 2.3.1. Slurry-Based Sawing; 2.3.1.1. Force in Ingot Feed Direction; 2.3.1.2. Friction Forces; 2.3.1.3. Dependence on Slurry Properties; 2.3.1.4. Wire Tension.
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|a 2.3.1.5. Wafer Thickness, Wire Diameter, and Particle Size Distribution2.3.1.6. Saw Marks; 2.3.2. Fixed Abrasive Sawing; 2.4. Determination of Wafer Properties; 2.4.1. Surface Properties; 2.4.1.1. Thickness, TTV, and Roughness; 2.4.1.2. Subsurface Damage; 2.4.2. Single Indentation Tests; 2.4.2.1. Loose Abrasive Sawing; 2.4.2.2. Fixed Abrasive Sawing; 2.4.3. Fracture Behavior; 2.5. Electronic Grade Silicon; 3. Basic Sawing Mechanisms; 3.1. Slurry-Based Sawing; 3.1.1. Material Removal Rate; 3.1.2. Elastohydrodynamic Behavior of Slurry and Wire; 3.1.3. Numerical Simulation of the Sawing Process.
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|a 3.2. Damage of the Wafer Surface3.2.1. Slurry Flow Instability and the Origin of Saw Marks; 3.2.2. Roughness and Subsurface Damage; 4. Alternative Wafering Technologies; 4.1. Cleavage Technologies; 4.2. Layer Transfer Technologies; References; Chapter Three: Reliability Issues of CIGS-Based Thin Film Solar Cells; 1. Reliability; 2. Metastabilities; 2.1. Conclusions on Metastabilities; 3. Partial Shading and Hotspots; 3.1. Conclusions on Partial Shading; 4. Potential-Induced Degradation; 4.1. Conclusions on PID; 5. Back Contact; Conclusions on Back Contact; References; Index.
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| 650 |
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|a Photovoltaic power generation.
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| 650 |
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7 |
|a TECHNOLOGY & ENGINEERING
|x Mechanical.
|2 bisacsh
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| 650 |
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|a Photovoltaic power generation.
|2 fast
|0 (OCoLC)fst01062167
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| 655 |
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4 |
|a Electronic books.
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| 700 |
1 |
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|a Willeke, G.,
|d 1954-
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| 700 |
1 |
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|a Weber, Eicke R.
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| 776 |
0 |
8 |
|i Print version:
|t Advances in photovoltaics. part 4.
|b First edition
|z 9780128010211
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| 830 |
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0 |
|a Semiconductors and semimetals ;
|v v. 92.
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| 856 |
4 |
0 |
|u https://www.sciencedirect.com/science/bookseries/00808784/92
|z Full Text via HEAL-Link
|
