Semiconductor Nanowires. I, Growth and Theory /

• Άλλοι συγγραφείς: Fontcuberta i Morral, Anna (Επιμελητής έκδοσης), Dayeg, Shadi A. (Επιμελητής έκδοσης), Jagadish, C. (Chennupati) (Επιμελητής έκδοσης)
• Μορφή: Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Waltham, MA : Academic Press is an imprint of Elsevier, 2015.
• Σειρά: Semiconductors and semimetals ; v. 93.
• Θέματα: Nanowires.; Semiconductors > Materials.; TECHNOLOGY & ENGINEERING > Mechanical.; Electronic books.

Πίνακας περιεχομένων:

• Front Cover; Semiconductor Nanowires I: Growth and Theory; Copyright; Contents; Contributors; Preface; Chapter One: Theory of VLS Growth of Compound Semiconductors; 1. Introduction; 2. Fundamentals of VLS Growth; 3. Chemical Potentials for Au-Catalyzed VLS Growth of III-V Nanowires; 4. Growth Kinetics of III-V Nanowires; 5. Transport-Limited Growth of Nanowires; 6. Nucleation Rate in VLS Nanowires; 7. Position-Dependent Nucleation in Nanowires; 8. Self-consistent Growth Equation; 9. Ga-Catalyzed Growth of GaAs Nanowires; 10. Formation of Ternary Au-Catalyzed III-V Nanowires.
• 11. Impact of Growth Conditions on the Crystal Structure of III-V NanowiresReferences; Chapter Two: Strain in Nanowires and Nanowire Heterostructures; 1. Introduction; 1.1. Scope; 1.2. Heterostructures, Mismatch, and Accommodation; 1.3. Nanowire Specificities; 2. Methods of Calculation and Measurement of Strain in Nanowires; 2.1. Calculation of Elastic Strain; 2.2. Experimental Assessment of Elastic Strain and Plastic Relaxation; 3. Axial Heterostructures; 3.1. Calculation of Elastic Relaxation in Axial Heterostructures.
• 3.2. Critical Dimensions for the Plastic Relaxation of Axial Heterostructures3.2.1. Theory; 3.2.2. Experiments; 4. Nanowires on a Misfitting Substrate; 5. Core-Shell Heterostructures; 5.1. Elastic Relaxation in Core-Shell Heterostructures: Theoretical Considerations; 5.2. Plastic Relaxation and Critical Dimensions in Core-Shell Heterostructures; 5.2.1. Theoretical Considerations; 5.2.2. Calculations; 5.2.3. Which Dislocations May Actually Form?; 5.2.4. Results; 5.2.5. Experiments; 6. Other Possible Instances of Strain Relaxation in NWs.
• 6.1. Augmented Strain Relaxation via Morphological Changes6.2. Stacking Faults, Twins, and Polytypism; 6.3. Sidewall-Induced and Edge-Induced Strains; 7. Summary and Conclusions; References; Chapter Three: van der Waals Heteroepitaxy of Semiconductor Nanowires; 1. Introduction; 1.1. Heteroepitaxy of Semiconductors on Atomic-Layered Materials (ALMs); 1.2. van der Waals Epitaxy (Versus Covalent Epitaxy); 2. van der Waals (vdW) Heteroepitaxy of Semiconductor Nanowires; 2.1. Vertically Aligned Nanowires on 2d-ALMs; 2.2. Nanowire Heterostructure.
• 2.3. vdW Epitaxial Nanowires on a Monoatomic Layer Substrate2.4. vdW Epitaxial Double Heterostructure: InAs/Graphene/InAs; 3. vdW Heteroepitaxial Relationship and Heterointerface of Nanowire/2d-ALM; 3.1. Nearly Commensurate System: InAs/Graphene; 3.2. Highly Incommensurate System: ZnO/hBN and ZnO/Mica; 4. Controlled vdW Epitaxy of Semiconductor Nanowires; 4.1. Nucleation and Growth on 2d-ALM with Surface Imperfections; 4.2. Position- and Shape-Controlled vdW Epitaxy; 5. Optoelectronic Device Applications; 6. Conclusions and Perspectives; Acknowledgment; References.