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04873nam a2200529 4500 |
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ocn968211885 |
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OCoLC |
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20180501122034.0 |
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m o d |
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cr cnu|||unuuu |
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170112s2017 maua ob 001 0 eng d |
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|a N$T
|b eng
|e rda
|e pn
|c N$T
|d OPELS
|d IDEBK
|d EBLCP
|d N$T
|d STF
|d OCLCF
|d UPM
|d YDX
|d NRC
|d OTZ
|d OCLCQ
|d MEU
|d GrThAP
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|a 9780128097236
|q (electronic bk.)
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|a 012809723X
|q (electronic bk.)
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|a 9780128095843
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|a (OCoLC)968211885
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|a TA1750
|b .N58 2017eb
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|a TEC
|x 009070
|2 bisacsh
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|a 621.381/045
|2 23
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|a TEFA
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|a III-Nitride Semiconductor Optoelectronics /
|c edited by Zetian Mi and Chennupati Jagadish.
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|a Cambridge, MA :
|b Academic Press is an imprint of Elsevier,
|c 2017.
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|a 1 online resource (xiv, 474 pages :
|b illustrations).
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|a text
|b txt
|2 rdacontent
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|a computer
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|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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|a Semiconductors and semimetals ;
|v volume 96
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| 546 |
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|a Text in English.
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|a Includes bibliographical references and index.
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|a Online resource; title from PDF title page (ScienceDirect, viewed January 13, 2017).
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|a Front Cover; III-Nitride Semiconductor Optoelectronics; Copyright; Contents; Contributors; Preface; Part I: AlGaN UV Optoelectronics; Chapter One: Materials Challenges of AlGaN-Based UV Optoelectronic Devices; 1. Introduction; 2. Doping Challenges of AlGaN Alloys; 2.1. P-Type Doping; 2.1.1. Optimized Growth Conditions for p-Type Doping of AlGaN; 2.1.2. Polarization Engineering Approaches to p-Type Doping; 2.1.2.1. Mg-Doped Superlattices; 2.1.2.2. Distributed Polarization Doping; 2.1.2.3. Tunnel Junctions; 2.2. n-Type doping; 3. Substrates for UV Optoelectronics; 3.1. Introduction
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| 505 |
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|a 3.2. Strain Management and Reduction of Extended Defects3.2.1. Impact of Extended Defects on Material and Device Properties; 3.2.2. Approaches to Strain Management and Defect Reduction; 3.3. Electrically Conductive Substrates and Alternative Approaches for Vertical-Injection-Geometry Devices; 3.3.1. n-Type GaN Substrates; 3.3.2. n-Type SiC Substrates; 3.3.3. Substrate Removal; 4. Summary and Outlook; Acknowledgments; References; Chapter Two: Development of Deep UV LEDs and Current Problems in Material and Device Technology; 1. Introduction; 2. Epitaxial Growth of AlN and AlGaN Alloys
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|a 2.1. High-Temperature MOCVD Growth of AlN on Sapphire2.2. MOCVD Growth of AlGaN Alloys; 3. Optical Properties of AlGaN; 3.1. Carrier Density and PL Decay Kinetics; 3.2. PL Efficiency and Lifetime; 3.3. Spectral Dependence of PL and Carrier Decay; 4. UV LED Device Design and Performance; 4.1. Efficiency of UV LED Devices; 4.2. UV LED Chip Design; 4.3. Improvements in Light Extraction from UV LED Devices; 5. Conclusions; Acknowledgments; References; Chapter Three: Growth of High-Quality AlN on Sapphire and Development of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes; 1. Introduction
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|a 2. Research Background of DUV LEDs3. Growth of High-Quality AlN on Sapphire Substrate; 4. Increase in IQE; 5. 222-351nm AlGaN and InAlGaN DUV LEDs; 6. Increase in EIE by MQB; 7. Future LED Design for High LEE; 8. Summary; References; Chapter Four: III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors; 1. Introduction; 2. MOCVD Growth of III-N DUV Materials and Heterostructures; 2.1. Substrate Selection Issues; 2.2. Growth of High-Quality AlN on Sapphire Templates; 2.3. Strain Effects; 2.4. Doping Issues; 3. III-N Device Design and Simulation
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|a 3.1. Simulation of Basic Materials Properties3.2. Comparison of Simulation Techniques; 4. Processing of III-N DUV Emitters and Photodetectors; 4.1. Ohmic Contacts; 4.1.1. n-Type Contacts; 4.1.2. p-Type Contacts; 4.2. Etching of III-N Materials; 4.3. Passivation of III-N Devices; 5. Performance of III-N DUV Lasers and Photodetectors; 5.1. Overview of DUV Lasers; 5.2. Optically Pumped DUV Lasers on Sapphire; 5.3. Fabry-Perot Injection Laser Limits; 5.4. III-N UVVCSEL Issues and Distributed Bragg Reflector Mirrors; 6. III-N DUV Photodetectors; 6.1. DUVPIN Photodiodes
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| 650 |
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|a Optoelectronics.
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| 650 |
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|a Optoelectronics
|x Materials.
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| 650 |
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|a Semiconductors.
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7 |
|a TECHNOLOGY & ENGINEERING / Mechanical
|2 bisacsh
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|a Optoelectronics.
|2 fast
|0 (OCoLC)fst01046921
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7 |
|a Optoelectronics
|x Materials.
|2 fast
|0 (OCoLC)fst01046923
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| 650 |
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|a Semiconductors.
|2 fast
|0 (OCoLC)fst01112198
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| 655 |
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|a Electronic books.
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1 |
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|a Mi, Zetian,
|e editor.
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| 700 |
1 |
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|a Jagadish, C.
|q (Chennupati),
|e editor.
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| 830 |
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|a Semiconductors and semimetals ;
|v v. 96.
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| 856 |
4 |
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|u https://www.sciencedirect.com/science/bookseries/00808784/96
|z Full Text via HEAL-Link
|
