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01386nam a2200313 u 4500 |
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881025s1983 ge eng |
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|a eng
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|a 537.622 6
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100 |
1 |
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|a Bourgoin, Jacques
|4 aut
|9 4377
|
245 |
1 |
0 |
|a Point defects in semiconductors II
|b experimental aspects
|c J. Bourgoin, M. Lannoo; with a foreword by G.D. Watkins
|
260 |
|
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|a Berlin
|b Springer-Verlag
|c 1983
|
300 |
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|a xvi, 295 p.
|b fig.
|c 24 cm.
|
490 |
0 |
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|a Springer series in solid state sciences
|v 35
|
504 |
|
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|a Includes bibliographic references and index
|
650 |
|
4 |
|a Ημιαγωγοί
|9 722
|
700 |
1 |
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|a Lannoo, M.
|4 aut
|9 125721
|
760 |
1 |
|
|a Springer series in solid-state sciences
|g 35
|
852 |
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|a GR-PaULI
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