Matching Properties of Deep Sub-Micron MOS Transistors
Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermor...
Main Authors: | , , |
---|---|
Corporate Author: | |
Format: | Electronic eBook |
Language: | English |
Published: |
Boston, MA :
Springer US,
2005.
|
Series: | The Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing,
851 |
Subjects: | |
Online Access: | Full Text via HEAL-Link |
Table of Contents:
- Introduction: Matching analysis. Importance for circuit design. State of the art. Research objectives. Outline of this book
- Measurement and Modeling of Mismatch. Measurement setup. Experimental setup. Modeling of mismatch in the drain current. Width and length dependence. Example: Yield of a current-steering D/A converter. Conclusions
- Parameter Extraction. Extraction methods. Experimental setup. Comparison of extraction methods. Future issues. Conclusions
- Physical Origins of Mosfet Mismatch. Basic operation of the MOS transistor. Mismatch in the drain current. Physical origins of fluctuations. Conclusions
- Technological Aspects. Technology descriptions. Impact of the gate. Impact of the halo implantation. Comparison of di®erent CMOS technologies. Alternative device concepts. Conclusions
- Impact of Line-Edge Roughness. Characterization of line-edge roughness. Modeling the impact of line-width roughness. Experimental investigation of the impact of LWR. Prediction of the impact of LWR and guidelines. Conclusions
- Conclusions, Future Work and Outlook. Conclusions. Future work
- Outlook.