Leakage in Nanometer CMOS Technologies

• Κύριοι συγγραφείς: Narendra, Siva G. (Συγγραφέας), Chandrakasan, Anantha (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Boston, MA : Springer US, 2006.
• Σειρά: Series on Integrated Circuits and Systems,
• Θέματα: Engineering.; Computer hardware.; Computer-aided engineering.; Electrical engineering.; Electronics.; Microelectronics.; Electronic circuits.; Nanotechnology.; Circuits and Systems.; Computer-Aided Engineering (CAD, CAE) and Design.; Electronics and Microelectronics, Instrumentation.; Computer Hardware.; Electrical Engineering.

Scaling transistors into the nanometer regime has resulted in a dramatic increase in MOS leakage (i.e., off-state) current. Threshold voltages of transistors have scaled to maintain performance at reduced power supply voltages. Leakage current has become a major portion of the total power consumptio...