Long-Term Reliability of Nanometer VLSI Systems Modeling, Analysis and Optimization /
This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent de...
Κύριοι συγγραφείς: | , , , , , |
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Συγγραφή απο Οργανισμό/Αρχή: | |
Μορφή: | Ηλεκτρονική πηγή Ηλ. βιβλίο |
Γλώσσα: | English |
Έκδοση: |
Cham :
Springer International Publishing : Imprint: Springer,
2019.
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Έκδοση: | 1st ed. 2019. |
Θέματα: | |
Διαθέσιμο Online: | Full Text via HEAL-Link |
Πίνακας περιεχομένων:
- Part I. New physics-based EM analysis and system-level dynamic reliability management
- Chapter 1. Introduction
- Chapter 2. Physics Based EM Modeling
- Chapter 3. Fast EM Stress Evolution Analysis Using Krylov Subspace Method
- Chapter 4. Fast EM Immortatlity Analysis For Multisegment Copper Interconnect Wires
- Chapter 5. Dynamic EM Models For Transient Stress Evolution and Recovery
- Chapter 6. Compact EM Models for Multi-SEgment Interconnect Wires
- Chapter 7. EM Assesment for Power Grid Networks
- Chapter 8. Resource Based EM Modeling for Multi-Crore Microprocessors
- Chapter 9. DRM and Optimization for Real Time Embedded Systems
- Chapter 10. Learning Based DRM and Energy Optimization for Many Core Dark Silicaon Processors
- Chapter 11. Recovery Aware DRM for Near Threshold Dark Silicon Processors
- Chapter 12. Cross-Layer DRM and Optimization For Datacenter Systems
- Part II. Transistor Aging Effects and Reliability
- 13. Introduction
- Chapter 14. Aging AWare Timings Analysis
- Chapter 15. Aging Aware Standard Cell Library Optimization Methods
- Chapter 16. Aging Effects In Sequential Elements
- Chapter 17. Aging Guardband Reduction Through Selective Flip Flop Optimization
- Chapter 18. Workload Aware Static Aging Monitoring and Mitigation of Timing Critical Flip Flops
- Chapter 19. Aging Relaxation at Micro Architecture Level Using Special NOPS
- Chapter 20. Extratime Modelling and Analyis of Transistor Agin at Microarchitecture Level
- Chapter 21. Reducing Processor Wearout By Exploiting The Timing Slack of Instructions.