GaP Heteroepitaxy on Si(100) Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients /
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial po...
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Format: | Electronic eBook |
Language: | English |
Published: |
Cham :
Springer International Publishing : Imprint: Springer,
2013.
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Series: | Springer Theses, Recognizing Outstanding Ph.D. Research,
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Online Access: | Full Text via HEAL-Link |
Internet
Full Text via HEAL-LinkΒΚΠ - Πατρα: ALFd
Call Number: |
330.01 BAU |
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Copy 1 | Available |
ΒΚΠ - Πατρα: BSC
Call Number: |
330.01 BAU |
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Copy 2 | Available |
Copy 3 | Available |