GaP Heteroepitaxy on Si(100) Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients /

• Κύριος συγγραφέας: Döscher, Henning (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Cham : Springer International Publishing : Imprint: Springer, 2013.
• Σειρά: Springer Theses, Recognizing Outstanding Ph.D. Research,
• Θέματα: Physics.; Semiconductors.; Optics.; Optoelectronics.; Plasmons (Physics).; Optical materials.; Electronic materials.; Optics, Optoelectronics, Plasmonics and Optical Devices.; Optical and Electronic Materials.

Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial po...

Πίνακας περιεχομένων:

• Introduction
• Experimental
• Si(100) surfaces in chemical vapor environments
• GaP(100) and InP(100) surfaces
• GaP growth on Si(100) and anti-phase disorder
• Conclusion.