Vibrational Properties of Defective Oxides and 2D Nanolattices Insights from First-Principles Simulations /

Ge and III–V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials – like graphene and MoS_2 – are also envisioned to replace Si in the future.   This thesis is devoted to the first-principles modeling of the vibrational prop...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριος συγγραφέας: Scalise, Emilio (Συγγραφέας)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Cham : Springer International Publishing : Imprint: Springer, 2014.
Σειρά:Springer Theses, Recognizing Outstanding Ph.D. Research,
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
LEADER 03415nam a22005535i 4500
001 978-3-319-07182-4
003 DE-He213
005 20151031121021.0
007 cr nn 008mamaa
008 140528s2014 gw | s |||| 0|eng d
020 |a 9783319071824  |9 978-3-319-07182-4 
024 7 |a 10.1007/978-3-319-07182-4  |2 doi 
040 |d GrThAP 
050 4 |a QC610.9-611.8 
072 7 |a TJFD5  |2 bicssc 
072 7 |a TEC008090  |2 bisacsh 
082 0 4 |a 537.622  |2 23 
100 1 |a Scalise, Emilio.  |e author. 
245 1 0 |a Vibrational Properties of Defective Oxides and 2D Nanolattices  |h [electronic resource] :  |b Insights from First-Principles Simulations /  |c by Emilio Scalise. 
264 1 |a Cham :  |b Springer International Publishing :  |b Imprint: Springer,  |c 2014. 
300 |a XVIII, 143 p. 90 illus., 36 illus. in color.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
490 1 |a Springer Theses, Recognizing Outstanding Ph.D. Research,  |x 2190-5053 
505 0 |a Introduction -- Theoretical Methods -- First-Principles Modelling of Vibrational Modes in Defective Oxides -- Vibrational Properties of Silicene and Germanene -- Interaction of Silicene with Non-Metallic Layered Templates -- Conclusions and Perspectives -- Appendix for Experimental Techniques. 
520 |a Ge and III–V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials – like graphene and MoS_2 – are also envisioned to replace Si in the future.   This thesis is devoted to the first-principles modeling of the vibrational properties of these novel channel materials.   The first part of the thesis focuses on the vibrational properties of various oxides on Ge, making it possible to identify the vibrational signature of specific defects which could hamper the proper functioning of MOSFETs.   The second part of the thesis reports on the electronic and vibrational properties of novel 2D materials like silicene and germanene, the Si and Ge 2D counterparts of graphene. The interaction of these 2D materials with metallic and non-metallic substrates is investigated. It was predicted, for the first time, and later experimentally confirmed, that silicene could be grown on a non-metallic template like MoS_2, a breakthrough that could open the door to the possible use of silicene in future nanoelectronic devices. 
650 0 |a Physics. 
650 0 |a Semiconductors. 
650 0 |a Surfaces (Physics). 
650 0 |a Interfaces (Physical sciences). 
650 0 |a Thin films. 
650 0 |a Electronic circuits. 
650 0 |a Optical materials. 
650 0 |a Electronic materials. 
650 1 4 |a Physics. 
650 2 4 |a Semiconductors. 
650 2 4 |a Optical and Electronic Materials. 
650 2 4 |a Theoretical, Mathematical and Computational Physics. 
650 2 4 |a Electronic Circuits and Devices. 
650 2 4 |a Surface and Interface Science, Thin Films. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer eBooks 
776 0 8 |i Printed edition:  |z 9783319071817 
830 0 |a Springer Theses, Recognizing Outstanding Ph.D. Research,  |x 2190-5053 
856 4 0 |u http://dx.doi.org/10.1007/978-3-319-07182-4  |z Full Text via HEAL-Link 
912 |a ZDB-2-PHA 
950 |a Physics and Astronomy (Springer-11651)