Vibrational Properties of Defective Oxides and 2D Nanolattices Insights from First-Principles Simulations /
Ge and III–V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials – like graphene and MoS_2 – are also envisioned to replace Si in the future. This thesis is devoted to the first-principles modeling of the vibrational prop...
Κύριος συγγραφέας: | Scalise, Emilio (Συγγραφέας) |
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Συγγραφή απο Οργανισμό/Αρχή: | SpringerLink (Online service) |
Μορφή: | Ηλεκτρονική πηγή Ηλ. βιβλίο |
Γλώσσα: | English |
Έκδοση: |
Cham :
Springer International Publishing : Imprint: Springer,
2014.
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Σειρά: | Springer Theses, Recognizing Outstanding Ph.D. Research,
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Θέματα: | |
Διαθέσιμο Online: | Full Text via HEAL-Link |
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