Vibrational Properties of Defective Oxides and 2D Nanolattices Insights from First-Principles Simulations /
Ge and III–V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials – like graphene and MoS_2 – are also envisioned to replace Si in the future. This thesis is devoted to the first-principles modeling of the vibrational prop...
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Format: | Electronic eBook |
Language: | English |
Published: |
Cham :
Springer International Publishing : Imprint: Springer,
2014.
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Series: | Springer Theses, Recognizing Outstanding Ph.D. Research,
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Online Access: | Full Text via HEAL-Link |
Internet
Full Text via HEAL-LinkΒΚΠ - Πατρα: ALFd
Call Number: |
330.01 BAU |
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Copy 1 | Available |
ΒΚΠ - Πατρα: BSC
Call Number: |
330.01 BAU |
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Copy 2 | Available |
Copy 3 | Available |