Vibrational Properties of Defective Oxides and 2D Nanolattices Insights from First-Principles Simulations /

Ge and III–V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials – like graphene and MoS_2 – are also envisioned to replace Si in the future.   This thesis is devoted to the first-principles modeling of the vibrational prop...

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Bibliographic Details
Main Author: Scalise, Emilio (Author)
Corporate Author: SpringerLink (Online service)
Format: Electronic eBook
Language:English
Published: Cham : Springer International Publishing : Imprint: Springer, 2014.
Series:Springer Theses, Recognizing Outstanding Ph.D. Research,
Subjects:
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ΒΚΠ - Πατρα: ALFd

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Call Number: 330.01 BAU
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ΒΚΠ - Πατρα: BSC

Holdings details from ΒΚΠ - Πατρα: BSC
Call Number: 330.01 BAU
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