Emerging Resistive Switching Memories
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental...
Κύριος συγγραφέας: | Ouyang, Jianyong (Συγγραφέας) |
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Συγγραφή απο Οργανισμό/Αρχή: | SpringerLink (Online service) |
Μορφή: | Ηλεκτρονική πηγή Ηλ. βιβλίο |
Γλώσσα: | English |
Έκδοση: |
Cham :
Springer International Publishing : Imprint: Springer,
2016.
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Σειρά: | SpringerBriefs in Materials,
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Θέματα: | |
Διαθέσιμο Online: | Full Text via HEAL-Link |
Παρόμοια τεκμήρια
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Charge-Trapping Non-Volatile Memories Volume 1 – Basic and Advanced Devices /
Έκδοση: (2015) -
Charge-Trapping Non-Volatile Memories Volume 2--Emerging Materials and Structures /
Έκδοση: (2017) -
Memories in Wireless Systems
Έκδοση: (2008) -
In Search of the Next Memory Inside the Circuitry from the Oldest to the Emerging Non-Volatile Memories /
Έκδοση: (2017) -
Embedded Memories for Nano-Scale VLSIs
Έκδοση: (2009)