Emerging Resistive Switching Memories

• Κύριος συγγραφέας: Ouyang, Jianyong (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Cham : Springer International Publishing : Imprint: Springer, 2016.
• Σειρά: SpringerBriefs in Materials,
• Θέματα: Materials science.; Computer memory systems.; Electronic circuits.; Electronics.; Microelectronics.; Nanotechnology.; Materials Science.; Electronic Circuits and Devices.; Electronics and Microelectronics, Instrumentation.; Memory Structures.

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental...

Πίνακας περιεχομένων:

• Introduction to history of memory devices and the present memory devices
• Introduction of resistive switches memory devices with nanoparticles
• Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode
• Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode
• Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles
• Mechanisms for resistive switches
• Application of the resistive switching devices with nanoparticles.