Multi-run Memory Tests for Pattern Sensitive Faults

• Κύριος συγγραφέας: Mrozek, Ireneusz (Συγγραφέας, http://id.loc.gov/vocabulary/relators/aut)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Cham : Springer International Publishing : Imprint: Springer, 2019.
• Έκδοση: 1st ed. 2019.
• Θέματα: Electronic circuits.; Microprocessors.; Electronics.; Microelectronics.; Circuits and Systems.; Processor Architectures.; Electronics and Microelectronics, Instrumentation.

This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing...

Πίνακας περιεχομένων:

• Introduction to digital memory
• Basics of functional RAM testing
• Multi-cell faults
• Controlled random testing
• Multi-run tests based on background changing
• Multi-run tests based on address changing
• Multiple controlled random testing
• Pseudo exhaustive testing based on march tests
• Conclusion.