Ferroelectric Random Access Memories Fundamentals and Applications /

• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Άλλοι συγγραφείς: Ishiwara, Hiroshi (Επιμελητής έκδοσης, http://id.loc.gov/vocabulary/relators/edt), Okuyama, Masanori (Επιμελητής έκδοσης, http://id.loc.gov/vocabulary/relators/edt), Arimoto, Yoshihiro (Επιμελητής έκδοσης, http://id.loc.gov/vocabulary/relators/edt)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2004.
• Έκδοση: 1st ed. 2004.
• Σειρά: Topics in Applied Physics, 93
• Θέματα: Metals.; Optical materials.; Electronic materials.; Condensed matter.; Solid state physics.; Spectroscopy.; Microscopy.; Metallic Materials.; Optical and Electronic Materials.; Condensed Matter Physics.; Solid State Physics.; Spectroscopy and Microscopy.

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book...