Ferroelectric Random Access Memories Fundamentals and Applications /

• Corporate Author: SpringerLink (Online service)
• Other Authors: Ishiwara, Hiroshi (Editor, http://id.loc.gov/vocabulary/relators/edt), Okuyama, Masanori (Editor, http://id.loc.gov/vocabulary/relators/edt), Arimoto, Yoshihiro (Editor, http://id.loc.gov/vocabulary/relators/edt)
• Format: Electronic eBook
• Language: English
• Published: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2004.
• Edition: 1st ed. 2004.
• Series: Topics in Applied Physics, 93
• Subjects: Metals.; Optical materials.; Electronic materials.; Condensed matter.; Solid state physics.; Spectroscopy.; Microscopy.; Metallic Materials.; Optical and Electronic Materials.; Condensed Matter Physics.; Solid State Physics.; Spectroscopy and Microscopy.
• Physical Description: XIII, 291 p. online resource.
• ISBN: 9783540451631
• ISSN: 0303-4216 ;
• DOI: 10.1007/b12953

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.