Ferroelectric Random Access Memories Fundamentals and Applications /

• Corporate Author: SpringerLink (Online service)
• Other Authors: Ishiwara, Hiroshi (Editor, http://id.loc.gov/vocabulary/relators/edt), Okuyama, Masanori (Editor, http://id.loc.gov/vocabulary/relators/edt), Arimoto, Yoshihiro (Editor, http://id.loc.gov/vocabulary/relators/edt)
• Format: Electronic eBook
• Language: English
• Published: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2004.
• Edition: 1st ed. 2004.
• Series: Topics in Applied Physics, 93
• Subjects: Metals.; Optical materials.; Electronic materials.; Condensed matter.; Solid state physics.; Spectroscopy.; Microscopy.; Metallic Materials.; Optical and Electronic Materials.; Condensed Matter Physics.; Solid State Physics.; Spectroscopy and Microscopy.

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book...