Ion Implantation and Synthesis of Materials

• Κύριοι συγγραφείς: Nastasi, Michael (Συγγραφέας), Mayer, James W. (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg, 2006.
• Θέματα: Physics.; Physical chemistry.; Particle acceleration.; Condensed matter.; Optical materials.; Electronic materials.; Materials science.; Particle Acceleration and Detection, Beam Physics.; Condensed Matter Physics.; Optical and Electronic Materials.; Characterization and Evaluation of Materials.; Physical Chemistry.

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implant...

Πίνακας περιεχομένων:

• General Features and Fundamental Concepts
• Particle Interactions
• Dynamics of Binary Elastic Collisions
• Cross-Section
• Ion Stopping
• Ion Range and Range Distribution
• Displacements and Radiation Damage
• Channeling
• Doping, Diffusion and Defects in Ion-Implanted Si
• Crystallization and Regrowth of Amorphous Si
• Si Slicing and Layer Transfer: Ion-Cut
• Surface Erosion During Implantation: Sputtering
• Ion-Induced Atomic Intermixing at the Interface: Ion Beam Mixing
• Application of Ion Implantation Techniques in CMOS Fabrication
• Ion implantation in CMOS Technology: Machine Challenges.