Advanced Gate Stacks for High-Mobility Semiconductors
Will nanoelectronic devices continue to scale according to Moore’s law? At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, al...
Corporate Author: | SpringerLink (Online service) |
---|---|
Other Authors: | Dimoulas, Athanasios (Editor), Gusev, Evgeni (Editor), McIntyre, Paul C. (Editor), Heyns, Marc (Editor) |
Format: | Electronic eBook |
Language: | English |
Published: |
Berlin, Heidelberg :
Springer Berlin Heidelberg,
2007.
|
Series: | Advanced Microelectronics,
27 |
Subjects: | |
Online Access: | Full Text via HEAL-Link |
Similar Items
-
Defects in High-k Gate Dielectric Stacks Nano-Electronic Semiconductor Devices /
Published: (2006) -
High Permittivity Gate Dielectric Materials
Published: (2013) -
Integration of Functional Oxides with Semiconductors
by: Demkov, Alexander A., et al.
Published: (2014) -
Strain-Induced Effects in Advanced MOSFETs
by: Sverdlov, Viktor
Published: (2011) -
Fundamentals of Semiconductors Physics and Materials Properties /
by: Yu, Peter Y., et al.
Published: (2010)