Advanced Gate Stacks for High-Mobility Semiconductors

• Corporate Author: SpringerLink (Online service)
• Other Authors: Dimoulas, Athanasios (Editor), Gusev, Evgeni (Editor), McIntyre, Paul C. (Editor), Heyns, Marc (Editor)
• Format: Electronic eBook
• Language: English
• Published: Berlin, Heidelberg : Springer Berlin Heidelberg, 2007.
• Series: Advanced Microelectronics, 27
• Subjects: Engineering.; Electronics.; Microelectronics.; Electronics and Microelectronics, Instrumentation.

Will nanoelectronic devices continue to scale according to Moore’s law? At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, al...

Table of Contents:

• Strained-Si CMOS Technology
• High Current Drivability MOSFET Fabricated on Si(110) Surface
• Advanced High-Mobility Semiconductor-on-Insulator Materials
• Passivation and Characterization of Germanium Surfaces
• Interface Engineering for High-? Ge MOSFETs
• Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-?/Metal Gate Metal-Oxide-Semiconductor Devices
• Modeling of Growth of High-? Oxides on Semiconductors
• Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs
• Point Defects in Stacks of High-? Metal Oxides on Ge: Contrast with the Si Case
• High ? Gate Dielectrics for Compound Semiconductors
• Interface Properties of High-? Dielectrics on Germanium
• A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High-? Materials and Films
• Germanium Nanodevices and Technology
• Opportunities and Challenges of Germanium Channel MOSFETs
• Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates
• Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics
• Fabrication of MBE High-? MOSFETs in a Standard CMOS Flow.