Advanced Gate Stacks for High-Mobility Semiconductors

Will nanoelectronic devices continue to scale according to Moore’s law? At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, al...

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Bibliographic Details
Corporate Author: SpringerLink (Online service)
Other Authors: Dimoulas, Athanasios (Editor), Gusev, Evgeni (Editor), McIntyre, Paul C. (Editor), Heyns, Marc (Editor)
Format: Electronic eBook
Language:English
Published: Berlin, Heidelberg : Springer Berlin Heidelberg, 2007.
Series:Advanced Microelectronics, 27
Subjects:
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