Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations

In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nan...

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Bibliographic Details
Main Author: Zhang, Rui-Qin (Author)
Corporate Author: SpringerLink (Online service)
Format: Electronic eBook
Language:English
Published: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2014.
Series:SpringerBriefs in Molecular Science,
Subjects:
Online Access:Full Text via HEAL-Link
Table of Contents:
  • Introduction
  • Growth mechanism of silicon nanowires
  • Stability of silicon nanostructures
  • Novel electronic properties of silicon nanostructures
  • Summary and remarks.