Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations
In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nan...
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Format: | Electronic eBook |
Language: | English |
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Berlin, Heidelberg :
Springer Berlin Heidelberg : Imprint: Springer,
2014.
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Series: | SpringerBriefs in Molecular Science,
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Online Access: | Full Text via HEAL-Link |
Table of Contents:
- Introduction
- Growth mechanism of silicon nanowires
- Stability of silicon nanostructures
- Novel electronic properties of silicon nanostructures
- Summary and remarks.