X-Ray Absorption Spectroscopy of Semiconductors

X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Άλλοι συγγραφείς: Schnohr, Claudia S. (Επιμελητής έκδοσης), Ridgway, Mark C. (Επιμελητής έκδοσης)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2015.
Σειρά:Springer Series in Optical Sciences, 190
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
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245 1 0 |a X-Ray Absorption Spectroscopy of Semiconductors  |h [electronic resource] /  |c edited by Claudia S. Schnohr, Mark C. Ridgway. 
264 1 |a Berlin, Heidelberg :  |b Springer Berlin Heidelberg :  |b Imprint: Springer,  |c 2015. 
300 |a XVI, 361 p. 185 illus., 86 illus. in color.  |b online resource. 
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490 1 |a Springer Series in Optical Sciences,  |x 0342-4111 ;  |v 190 
505 0 |a Introduction to XAS -- Crystalline Semiconductors -- Disordered Semiconductors.- Nanostructures -- Magnetic Semiconductors. 
520 |a X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research. 
650 0 |a Physics. 
650 0 |a Optics. 
650 0 |a Electrodynamics. 
650 0 |a Semiconductors. 
650 0 |a Spectroscopy. 
650 0 |a Microscopy. 
650 0 |a Optical materials. 
650 0 |a Electronic materials. 
650 0 |a Materials science. 
650 1 4 |a Physics. 
650 2 4 |a Semiconductors. 
650 2 4 |a Optical and Electronic Materials. 
650 2 4 |a Spectroscopy and Microscopy. 
650 2 4 |a Characterization and Evaluation of Materials. 
650 2 4 |a Applied and Technical Physics. 
650 2 4 |a Optics and Electrodynamics. 
700 1 |a Schnohr, Claudia S.  |e editor. 
700 1 |a Ridgway, Mark C.  |e editor. 
710 2 |a SpringerLink (Online service) 
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776 0 8 |i Printed edition:  |z 9783662443613 
830 0 |a Springer Series in Optical Sciences,  |x 0342-4111 ;  |v 190 
856 4 0 |u http://dx.doi.org/10.1007/978-3-662-44362-0  |z Full Text via HEAL-Link 
912 |a ZDB-2-PHA 
950 |a Physics and Astronomy (Springer-11651)