Strain-Induced Effects in Advanced MOSFETs

Strain-Induced Effects in Advanced MOSFETs

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor fil...

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Bibliographic Details
Main Author: Sverdlov, Viktor (Author)
Corporate Author: SpringerLink (Online service)
Format: Electronic eBook
Language:English
Published: Vienna : Springer Vienna : Imprint: Springer, 2011.
Series:Computational Microelectronics,
Subjects:
Engineering.
Electronics.
Microelectronics.
Electronics and Microelectronics, Instrumentation.
Online Access:Full Text via HEAL-Link

Internet

Full Text via HEAL-Link

ΒΚΠ - Πατρα: ALFd

Holdings details from ΒΚΠ - Πατρα: ALFd
Call Number: 330.01 BAU
Copy 1 Available

ΒΚΠ - Πατρα: BSC

Holdings details from ΒΚΠ - Πατρα: BSC
Call Number: 330.01 BAU
Copy 2 Available
Copy 3 Available

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