Strain-Induced Effects in Advanced MOSFETs

• Κύριος συγγραφέας: Sverdlov, Viktor (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Vienna : Springer Vienna : Imprint: Springer, 2011.
• Σειρά: Computational Microelectronics,
• Θέματα: Engineering.; Electronics.; Microelectronics.; Electronics and Microelectronics, Instrumentation.

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor fil...