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01991nam a22004575i 4500 |
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110106s2011 au | s |||| 0|eng d |
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|a 9783709103821
|9 978-3-7091-0382-1
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|a 10.1007/978-3-7091-0382-1
|2 doi
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|a TK7800-8360
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|a 621.381
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|a Sverdlov, Viktor.
|e author.
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|a Strain-Induced Effects in Advanced MOSFETs
|h [electronic resource] /
|c by Viktor Sverdlov.
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|a Vienna :
|b Springer Vienna :
|b Imprint: Springer,
|c 2011.
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|a XIV, 252 p. 101 illus.
|b online resource.
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|a text
|b txt
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|a computer
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|b PDF
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|a Computational Microelectronics,
|x 0179-0307
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|a Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
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|a Engineering.
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|a Electronics.
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|a Microelectronics.
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|a Engineering.
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|a Electronics and Microelectronics, Instrumentation.
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|a SpringerLink (Online service)
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|t Springer eBooks
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|i Printed edition:
|z 9783709103814
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|a Computational Microelectronics,
|x 0179-0307
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|u http://dx.doi.org/10.1007/978-3-7091-0382-1
|z Full Text via HEAL-Link
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|a ZDB-2-ENG
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|a Engineering (Springer-11647)
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