Fundamentals of Bias Temperature Instability in MOS Transistors Characterization Methods, Process and Materials Impact, DC and AC Modeling /

• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Άλλοι συγγραφείς: Mahapatra, Souvik (Επιμελητής έκδοσης)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: New Delhi : Springer India : Imprint: Springer, 2016.
• Έκδοση: 1st ed. 2015.
• Σειρά: Springer Series in Advanced Microelectronics, 52
• Θέματα: Engineering.; Solid state physics.; Electronics.; Microelectronics.; Electronic circuits.; Circuits and Systems.; Electronics and Microelectronics, Instrumentation.; Solid State Physics.

This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based mode...

Πίνακας περιεχομένων:

• Introduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs
• Characterization Methods for BTI Degradation and Associated Gate Insulator Defects
• Physical Mechanism of BTI Degradation – Direct Estimation of Trap Generation and Trapping
• Physical Mechanism of BTI Degradation –Modeling of Process and Material Dependence
• Reaction-Diffusion Model
• Modeling of DC and AC NBTI Degradation and Recovery for SiON and HKMG MOSFETs
• Index.