Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

• Κύριοι συγγραφείς: Franco, Jacopo (Συγγραφέας), Kaczer, Ben (Συγγραφέας), Groeseneken, Guido (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Dordrecht : Springer Netherlands : Imprint: Springer, 2014.
• Σειρά: Springer Series in Advanced Microelectronics, 47
• Θέματα: Physics.; Semiconductors.; Electronic circuits.; Optical materials.; Electronic materials.; Circuits and Systems.; Optical and Electronic Materials.; Electronic Circuits and Devices.

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 yea...

Πίνακας περιεχομένων:

• 1 Introduction
• 2 Degradation mechanisms
• 3 Techniques and devices
• 4 Negative Bias Temperature Instability in (Si)Ge pMOSFETs
• 5 Negative Bias Temperature Instability in nanoscale devices
• 6 Channel Hot Carriers and other reliability mechanisms
• 7 Conclusions and perspectives.