Variation-Aware Advanced CMOS Devices and SRAM
This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications o...
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| Format: | Electronic eBook |
| Language: | English |
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Dordrecht :
Springer Netherlands : Imprint: Springer,
2016.
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| Series: | Springer Series in Advanced Microelectronics,
56 |
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| Online Access: | Full Text via HEAL-Link |
Table of Contents:
- 1 Introduction and Overview
- 2 Understanding of Process-Induced Random Variation
- 3 Various Variation-Robust CMOS Device Designs
- 4 Applications to Static Random Access Memory (SRAM)
- 5 Conclusion.