Variation-Aware Advanced CMOS Devices and SRAM

• Κύριος συγγραφέας: Shin, Changhwan (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Dordrecht : Springer Netherlands : Imprint: Springer, 2016.
• Σειρά: Springer Series in Advanced Microelectronics, 56
• Θέματα: Physics.; Semiconductors.; Electronic circuits.; Electronics.; Microelectronics.; Electronic Circuits and Devices.; Circuits and Systems.; Electronics and Microelectronics, Instrumentation.

This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications o...

Πίνακας περιεχομένων:

• 1 Introduction and Overview
• 2 Understanding of Process-Induced Random Variation
• 3 Various Variation-Robust CMOS Device Designs
• 4 Applications to Static Random Access Memory (SRAM)
• 5 Conclusion.