Variation-Aware Advanced CMOS Devices and SRAM

This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications o...

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Bibliographic Details
Main Author: Shin, Changhwan (Author)
Corporate Author: SpringerLink (Online service)
Format: Electronic eBook
Language:English
Published: Dordrecht : Springer Netherlands : Imprint: Springer, 2016.
Series:Springer Series in Advanced Microelectronics, 56
Subjects:
Online Access:Full Text via HEAL-Link
Table of Contents:
  • 1 Introduction and Overview
  • 2 Understanding of Process-Induced Random Variation
  • 3 Various Variation-Robust CMOS Device Designs
  • 4 Applications to Static Random Access Memory (SRAM)
  • 5 Conclusion.