Variation-Aware Advanced CMOS Devices and SRAM

This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications o...

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Bibliographic Details
Main Author: Shin, Changhwan (Author)
Corporate Author: SpringerLink (Online service)
Format: Electronic eBook
Language:English
Published: Dordrecht : Springer Netherlands : Imprint: Springer, 2016.
Series:Springer Series in Advanced Microelectronics, 56
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