Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications /

• Corporate Author: SpringerLink (Online service)
• Other Authors: Park, Byung-Eun (Editor), Ishiwara, Hiroshi (Editor), Okuyama, Masanori (Editor), Sakai, Shigeki (Editor), Yoon, Sung-Min (Editor)
• Format: Electronic eBook
• Language: English
• Published: Dordrecht : Springer Netherlands : Imprint: Springer, 2016.
• Series: Topics in Applied Physics, 131
• Subjects: Physics.; Surfaces (Physics).; Interfaces (Physical sciences).; Thin films.; Electronic circuits.; Electronics.; Microelectronics.; Materials > Surfaces.; Electronic Circuits and Devices.; Electronics and Microelectronics, Instrumentation.; Surfaces and Interfaces, Thin Films.; Circuits and Systems.; Surface and Interface Science, Thin Films.

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics an...

Table of Contents:

• Operation Principle of One-Transistor Type Ferroelectric-gate Field Effect Transistors
• Practical Characteristics of Inorganic Ferroelectric-gate FETs
• Si-Based Ferroelectric-gate Field Effect Transistors
• Thin film-Based Ferroelectric-gate Field Effect Transistors
• Practical Characteristics of Organic Ferroelectric-gate FETs
• Si-Based Ferroelectric-gate Field Effect Transistors
• Thin film-Based Ferroelectric-gate Field Effect Transistors
• Ferroelectric-gate Field Effect Transistors with flexible substrates
• Applications and Future Prospects.