Electromigration Modeling at Circuit Layout Level

• Κύριοι συγγραφείς: Tan, Cher Ming (Συγγραφέας), He, Feifei (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Singapore : Springer Singapore : Imprint: Springer, 2013.
• Σειρά: SpringerBriefs in Applied Sciences and Technology,
• Θέματα: Engineering.; Atoms.; Physics.; Electronic circuits.; Quality control.; Reliability.; Industrial safety.; Quality Control, Reliability, Safety and Risk.; Electronic Circuits and Devices.; Atomic, Molecular, Optical and Plasma Physics.

 Integrated circuit (IC) reliability is of increasing concern in present-day IC technology where the interconnect failures significantly increases the failure rate for ICs with decreasing interconnect dimension and increasing number of interconnect levels.  Electromigration (EM) of interconnects has now become the dominant failure mechanism that determines the circuit reliability. This brief addresses the readers to the necessity of 3D real circuit modelling in order to evaluate the EM of interconnect system in ICs, and how they can create such models for their own applications. A 3-dimensional (3D) electro-thermo-structural model as opposed to the conventional current density based 2-dimensional (2D) models is presented at circuit-layout level. . 

 Introduction -- 3D Circuit Model Construction and Simulation -- Comparison of EM Performance in Circuit Structure and Test Structure -- Interconnect EM Reliability Modeling at Circuit Layout Level -- Conclusion.