GaN transistors for efficient power conversion /

• Κύριος συγγραφέας: Lidow, Alex
• Μορφή: Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Chichester, West Sussex : Wiley, [2014]
• Έκδοση: Second edition.
• Θέματα: Field-effect transistors.; Gallium nitride.; TECHNOLOGY & ENGINEERING > Mechanical.; Electronic books.

Gallium nitride (GaN) is an emerging technology that promises to displace siliconMOSFETs in the next generation of power transistors. As silicon approaches itsperformance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power...